Abstract
Sol-gel dip coating was used to obtain undoped and Fe doped TiO 2 thin films deposited on ITO (Indium tin oxide) coated glass substrate. These films were sintered at 500 ? C for 1 hour. The particle size decreases with increase in Fe concentration. The electrical properties were analyzed by Electrometer in the voltage range -30V to +30V. We examined the various conduction mechanisms i.e. Schottky mechanism, Poole Frenkle mechanism, ohmic and space charge limited current mechanism etc. The dominant conduction mechanism is space charge and Pool-Frenkel conduction mechanism. These conduction mechanisms depend upon the deposition parameters like sintering temperature, nature of substrate, thickness of films, nature and amount of dopant.
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