<?xml version="1.0" encoding="UTF-8"?>
<article article-type="research-article" xml:lang="en" xmlns:xlink="http://www.w3.org/1999/xlink">
<front>
<journal-meta>
<journal-id journal-id-type="publisher">london-journal-of-research-in-science-natural-and-formal</journal-id>
<journal-title-group>
<journal-title>London Journal of Research In Science: Natural and Formal</journal-title>
</journal-title-group>
<issn publication-format="print">2631-8490</issn>
<issn publication-format="electronic">2631-8504</issn>
<publisher><publisher-name>JournalsPress</publisher-name></publisher>
<self-uri xlink:href="https://journalspress.com/journal-seo-export/jats/66189.xml" />
</journal-meta>
<article-meta>
<article-id pub-id-type="publisher-id">66189</article-id>
<title-group>
<article-title>Electrical Conduction Mechanisms of Pure and Fe Doped TiO2 thin Films for IC Technology</article-title>
</title-group>
<volume>19</volume>
<issue>7</issue>
<fpage>81</fpage>
<lpage>85</lpage>
<abstract><p>Sol-gel dip coating was used to obtain undoped and Fe doped TiO 2 thin films deposited on ITO (Indium tin oxide) coated glass substrate. These films were sintered at 500 ? C for 1 hour. The particle size decreases with increase in Fe concentration. The electrical properties were analyzed by Electrometer in the voltage range -30V to +30V. We examined the various conduction mechanisms i.e. Schottky mechanism, Poole Frenkle mechanism, ohmic and space charge limited current mechanism etc. The dominant conduction mechanism is space charge and Pool-Frenkel conduction mechanism. These conduction mechanisms depend upon the deposition parameters like sintering temperature, nature of substrate, thickness of films, nature and amount of dopant.</p></abstract>
<self-uri content-type="pdf" xlink:href="http://journalspress.com/LJRS_Volume19/699_Electrical-conduction-mechanisms-of-pure-and-Fe-doped-TiO2-thin-films-for-IC-technology.pdf" />
<self-uri content-type="html" xlink:href="https://journalspress.com/electrical-conduction-mechanisms-of-pure-and-fe-doped-tio2-thin-films-for-ic-technology/" />
</article-meta>
</front>
<body>
<sec>
<title>Full Text</title>
<p>Sol-gel dip coating was used to obtain undoped and Fe doped TiO 2 thin films deposited on ITO (Indium tin oxide) coated glass substrate. These films were sintered at 500 ? C for 1 hour. The particle size decreases with increase in Fe concentration. The electrical properties were analyzed by Electrometer in the voltage range -30V to +30V. We examined the various conduction mechanisms i.e. Schottky mechanism, Poole Frenkle mechanism, ohmic and space charge limited current mechanism etc. The dominant conduction mechanism is space charge and Pool-Frenkel conduction mechanism. These conduction mechanisms depend upon the deposition parameters like sintering temperature, nature of substrate, thickness of films, nature and amount of dopant.</p>
</sec>
</body>
</article>