Abstract
Sol-gel dip coating was used to obtain undoped and Fe doped TiO 2 thin films deposited on ITO (Indium tin oxide) coated glass substrate. These films were sintered at 500 ? C for 1 hour. The particle size decreases with increase in Fe concentration. The electrical properties were analyzed by Electrometer in the voltage range -30V to +30V. We examined the various conduction mechanisms i.e. Schottky mechanism, Poole Frenkle mechanism, ohmic and space charge limited current mechanism etc. The dominant conduction mechanism is space charge and Pool-Frenkel conduction mechanism. These conduction mechanisms depend upon the deposition parameters like sintering temperature, nature of substrate, thickness of films, nature and amount of dopant.
Conflict of Interest
The authors declare no conflict of interest.
Ethical Approval
Not applicable
Data Availability
The datasets used in this study are openly available at [repository link] and the source code is available on GitHub at [GitHub link].
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