The Effect on the Photoelectric Parameters of Non-Uniformly Light Absorption in Structures based on a-Si:H

In this manuscript gives the conclusion of an analytical expression that determines the dependence of the height of the potential barrier, which is obtained upon unevenly light absorption of over the thickness of the i- layer in the target of video with n-i-p structures based on a-Si:H, on the light
intensity. In addition, it is investigated that the dependence of the width of space charge region (SCR) on certain features of a-Si:H.

The authors declare no conflict of interest.

Not applicable

The datasets used in this study are openly available at [repository link] and the source code is available on GitHub at [GitHub link].

This work did not receive any external funding.